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Power Amplifier

✔ High Power up to CW P-1 500W  |   ✔ Ultra-Wideband up to 20 octave   | ✔ High Frequency up to 50GHz  |  ✔ High Efficiency up to 50%  |   ✔ Excellent Linearity  |  ✔ Extraordinary harmonic control
Gallium nitride transistor is utilized for wideband matching,products advantages are presented by: High efficiency, wide frequency range and excellent linearity, while a single amplifier is combined by spatial power combining technique.Detailed analysis of each transistor characteristic is carried out to extract the best data, with modular design in progress; on the other hand it is appropriate for mass production.
Part Number
Low Freq.

(GHz)

High Freq.

(GHz)

Gain

(dB)

P1dB

(dBm)

Psat

(dBm)

Gain Flatness

(±dB)

VSWR

(In)

Power Supply

(V)

Current

(mA)

Stock
PDF
Quote
MZPA0118GAC20 1 18 24 25 26 1.5 1.7 220 100 NO
MZPA0618GAC30W 6 18 40 42 45 2.5 1.5 220 50000 NO
MZPA0618GAC100W 6 18 58 47 50 2.5 2 220 5000 NO
MZPA1840GAC0.5W 18 40 25 25 26 2 1.7 220 50 NO
MZPA40754325GAC4W 40.75 43.25 36 34 35 2 1.8 220 4000 NO
MZPA0218GAC30W 2 18 40 42 45 2.5 1.5 220 50000 NO
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